High-temperature growth of Mn-irradiated InAs quantum dots

被引：2
|
作者：
Nagahara, Seiji
Tsukamoto, Shiro
Arakawa, Yasuhiko
机构：
[1] Univ Tokyo, Nanoelect Collabotat Res ctr, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538505, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / SPEC. ISS.期
关键词：
quantum dots; InAs : Mn; MnAs; diluted magnetic semiconductors;
D O I：
10.1016/j.jcrysgro.2006.11.086
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We fabricated Mn-irradiated InAs quantum dot (QD) structures at 500 degrees C. In the case of Mn irradiation on InAs QDs without As, the terraces were observed around dots by an atomic force microscope (AFM). It is believed that Mn atoms adhere to InAs QDs and MnAs is formed. Furthermore, we measured micro-photoluminescence from such Mn-irradiated InAs QD samples under magnetic fields. Clear Zeeman splitting was observed at 2.9 K. The estimated absolute values of the exciton g factor were 2.4-3.8. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：797 / 800
页数：4
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