Photon-Drag Effect in p-Type Tellurium

被引：1
|
作者：
Rasulov, R. Ya. [1 ]
Rasulov, V. R. [1 ]
Eshboltaev, I. [2 ]
Mamadalieva, N. Z. [2 ]
机构：
[1] Fergana State Univ, Fergana, Uzbekistan
[2] Kokand State Pedag Inst, Kokand, Uzbekistan
来源：
RUSSIAN PHYSICS JOURNAL | 2019年 / 62卷 / 06期
关键词：
semiconductor; polarized light; optical transition; holes; photoelectric current; tellurium;
D O I：
10.1007/s11182-019-01818-5
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper suggests spectral and temperature dependences of the light absorption coefficient and photon-drag effect in p-type tellurium exposed to linear polarized light. The photon momentum is considered both in the law of conservation of energy and the matrix element of optical transition between subbands of tellurium valence band. Photoelectric current is measured as time approximation of the hole momentum relaxation.
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页码：1082 / 1089
页数：8
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