A highly integrated quad band low EVM polar modulation transmitter for GSM/EDGE applications

被引：9

作者：

Hadjichristos, A ^{[1
]}

Walukas, J ^{[1
]}

Klemmer, N ^{[1
]}

Suter, W ^{[1
]}

Justice, S ^{[1
]}

Uppathil, S ^{[1
]}

Scott, G ^{[1
]}

机构：

[1] Ericsson Mobile Platforms, Res Triangle Pk, NC 27709 USA

来源：

PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/CICC.2004.1358885

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A polar modulation transmitter fabricated in BiCMOS technology is presented. It uses an offset loop transmitter to achieve both GSM and EDGE phase modulation. For the 8PSK modulation, the amplitude information is reconstructed through the use of a saturated GSM power amplifier with collector voltage modulation. This solution does not require the use of S.A.W. filters and RF isolators and maintains excellent EVM and good ACPR over a wide range of VSWR. This transmitter is part of a Quad Band GSM/EDGE highly integrated transceiver.

引用

页码：565 / 568

页数：4

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