How we made the IGZO transistor

被引：115

作者：

Hosono, Hideo ^{[1
]}

机构：

[1] Tokyo Inst Technol, Yokohama, Kanagawa, Japan

来源：

NATURE ELECTRONICS | 2018年 / 1卷 / 07期

关键词：

All Open Access; Bronze;

D O I：

10.1038/s41928-018-0106-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconducting indium compounds

引用

页码：428 / 428

页数：1

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