How we made the IGZO transistor

被引：115
|
作者：
Hosono, Hideo [1 ]
机构：
[1] Tokyo Inst Technol, Yokohama, Kanagawa, Japan
来源：
NATURE ELECTRONICS | 2018年 / 1卷 / 07期
关键词：
All Open Access; Bronze;
D O I：
10.1038/s41928-018-0106-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconducting indium compounds
引用
收藏
页码：428 / 428
页数：1
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