Gold Drop Formation and Motion over a Si(111) Substrate: Monte Carlo Simulation

被引：2
|
作者：
Kudrich, S. V. [1 ]
Spirina, A. A. [2 ]
Shwartz, N. L. [1 ,2 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia
[2] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2022年 / 58卷 / 06期
关键词：
gold; Si(100); Si(111); simulation; Monte Carlo model; AU; GROWTH;
D O I：
10.3103/S8756699022060061
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The present paper is devoted to the Monte Carlo simulation of the motion of Au-Si melt drops over vicinal Si(111) surface during gold deposition onto a silicon substrate. The behavior of drops on the Si surfaces with orientations (100) and (111) is considered. It was found that the direction of Au-Si drops motion over vicinal Si(111) surface is governed by asymmetry in the lateral drop-substrate interface. The reason of asymmetry in the lateral interface on vicinal Si(111) surface is steps. The motion of a drop occurs due to the dissolution of a silicon substrate in striving to an equilibrium Au-Si melt concentration in the volume of a drop. The kinetics of Au-Si melt drops motion over the silicon surface is analyzed.
引用
收藏
页码：608 / 615
页数：8
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