Fast on-chip inductance extraction of VLSI including angled interconnects

被引:0
|
作者
Kurokawa, A [1 ]
Hachiya, K
Sato, T
Tokumasu, K
Masuda, H
机构
[1] STARC, Yokohama, Kanagawa 2220033, Japan
[2] NEC Corp Ltd, Kawasaki, Kanagawa 2118666, Japan
[3] Hitachi Ltd, Kodaira, Tokyo 1878588, Japan
关键词
inductance; parasitic extraction; VLSI interconnect; geometric mean distance; skin effect;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A formula-based approach for extracting the inductance of on-chip VLSI interconnections is presented. All of the formulae have been previously proposed and are well-known, but the degrees of accuracy they provide in this context have not previously been examined. The accuracy of the equations for a 0.1 mum technology node is evaluated through comparison of their results with those of 3-D field solvers. Comprehensive evaluation has proven that the maximum relative error of self- and mutual inductances as calculated by the formulae are less than 5% for parallel wires and less than 13% for angled wires, when wire width is limited to no more than 10 times the minimum. When applied to a realistic example with 43 wire segments, a program using the formula-based approach extracts values more than 60 times faster than a 3-D field solver.
引用
收藏
页码:841 / 845
页数:5
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