Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

被引：4

作者：

Lundin, W. V. ^{[1
,2
]}

Zavarin, E. E. ^{[1
,2
]}

Brunkov, P. N. ^{[1
,2
]}

Yagovkina, M. A. ^{[1
,2
]}

Sakharov, A. V. ^{[1
,2
]}

Sinitsyn, M. A. ^{[1
,2
]}

Ber, B. Ya. ^{[1
,2
]}

Kazantsev, D. Yu. ^{[1
,2
]}

Tsatsulnikov, A. F. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

OPTIMIZATION; LAYER;

D O I：

10.1134/S106378501605028X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of propane present in a reactor at various stages of GaN growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates on the character of epitaxial process and the properties of epilayers has been studied. Doped GaN epilayers with carbon concentration 5 x 10(18) cm(-3) characterized by high crystalline perfection, an atomically smooth surface, and electric breakdown voltage above 500 V at a doped layer thickness of 4 mu m have been obtained.

引用

页码：539 / 542

页数：4

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