Characterization of the SiO2/Si interface structure and the dielectric properties of N2O-oxynitrided ultrathin SiO2 films

The SiO2/Si(100) interface structure and the dielectric properties of rapid thermal N2O-oxynitrided (RTON) ultrathin (<10 nm) SiO2 films have been investigated. Spectroscopic measurements indicate the accumulation of nitrogen atoms (>10(20) atoms/cm(3)) and stable SIN bond formation at the SiO2/Si interface. By using the RTON SiO2 as a gate insulator of sub-halfmicron CMOSFETs, both blocking boron penetration and reducing electron traps have been simultaneously achieved. Thus, this fabrication process is hopeful as a key technology toward sub-0.1-mu m rule MOSLSIs.