Stark spectroscopy of Ge/Si(001) self-assembled quantum dots

被引：0

作者：

Yakimov, A. I. ^{[1
]}

Dvurechenskii, A. V. ^{[1
]}

Nikiforov, A. I. ^{[1
]}

Ulyanov, V. V. ^{[1
]}

Milekhin, A. G. ^{[1
]}

Schulze, S. ^{[1
]}

Zahn, D. R. T. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6 | 2003年 / 2卷 / 06期

关键词：

quantum dots; stark effect; interband transitions;

D O I：

10.1142/S0219581X03001619

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Stark spectroscopy was employed to study interband optical transitions in an array of Ge/Si self-assembled quantum dots. The mean diameter and height of the Ge nanoclusters are about 6 nm and 4 mn, respectively. Under an applied electric field splitting of the exciton ground state is observed, implying that the dots possess two permanent dipole moments of opposite sign. We argue that the two possible orientations of the electronhole dipole in each Ge dot are the result of the spatial separation of electrons which can be excited in Si as well as on top and below the Ge nanocluster. The separation of electron and hole is determined to be (5.1 +/- 0.2) nm for the top (apex) electron, and (0.8 +/- 0.3) nm for the bottom (base) electron, yielding a distance between the electrons of (5.9 +/- 0.5) nm, which is consistent with the staggered band line-up inherent to type-II quantum dots.

引用

页码：505 / 510

页数：6

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