Carbon nanotube field-effect transistor for GHZ operation

被引：0

作者：

Bethoux, J. -M. ^{[1
]}

Happy, H. ^{[1
]}

Dambrine, G. ^{[1
]}

Borghetti, J. ^{[2
]}

Derycke, V. ^{[2
]}

Goffman, M. ^{[2
]}

Bourgoin, J. -P. ^{[2
]}

机构：

[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, BP 60069, F-59652 Villeneuve Dascq, France

[2] SPEC, Comm Energie Atom, Lab Elect Moleculaire, F-91191 Gif Sur Yvette, France

来源：

ESSDERC 2006: PROCEEDINGS OF THE 36TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F-T of 1 GHz, with a slope of -20dB/decade, for the first time.

引用

页码：206 / +

页数：3

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