Carbon Nano-Tube Field Effect Transistors for Dualband Low Noise Amplifier

Low noise amplifier (LNA) for 40 GHz and 60GHz wireless PAN has been simulated using a carbon nanotube FET HSPICE model. The LNA transfer gain (S-21) and noise figure (NF) were found to be 11 dB and 1.6 dB respectively at 40 GHz and 8 dB and 2 dB at 60 GHz. Excellent simultaneous matching at both bands at input (S-11 <=-20dB) and output (S-22 <=-18dB), as well as stability factor K >1 have been achieved. The 3-dB bandwidth (BW) and noise figure (NF) of the proposed LNA circuit at lower and upper bands were >2.5 GHz and <2dB, respectively and power consumption PDC was 1.75 mW. With gate overdrive V-GS-VTH<100mV, transit frequency f(T) and maximum frequency of oscillation f(MAX) were reported as similar to 300 GHz and similar to 350GHz, respectively. Input referred third-order intercept point (IIP3) was reported as similar to 5.8dBm @40GHz and similar to 7.5 dBm@60 GHz. An overall figure-of-merit (FoM) involving S-21, NF, BW, IIP3 and PDC was found to be significantly higher than a previously published experimental result for silicon CMOS LNA.