Green's function method for calculation of strain field due to a quantum dot in a semi-infinite anisotropic solid

被引：0
|
作者：
Tewary, VK [1 ]
机构：
[1] NIST, Div Mat Reliabil, Boulder, CO 80305 USA
来源：
NANOSTRUCTURED INTERFACES | 2002年 / 727卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A computationally convenient Green's function method is described for calculation of strain characteristics of quantum dots in an anisotropic semi-infinite solid containing a free surface. Semi-analytic expressions are derived for the strain field due to a quantum dot, strain energy of a quantum dot, and strain-field interaction between 2 quantum dots. Numerical results are presented for the strain field due to a quantum dot in GaAs. It is shown that the effect of the free surface, which has been neglected in earlier calculations using Green's function methods, is quite significant.
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页码：37 / 42
页数：6
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