Design and Realization of Compact High Power Solid State Power Amplifier

被引：0
|
作者：
Chavan, Vanitha L. [1 ]
Chandrashekar, K. [1 ]
Ashwini, U. [1 ]
Jain, Abhinav [2 ]
机构：
[1] Bharat Elect Ltd, RFMW PDIC, Bangalore, Karnataka, India
[2] Bharat Elect Ltd, MM PDIC, Bangalore, Karnataka, India
来源：
2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2021年
关键词：
SSPA; GaN; Bias Sequence; VVA; ALC;
D O I：
10.1109/IMaRC49196.2021.9714534
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper details the design and development of 50W compact Solid State Power Amplifier (SSPA) with modular approach operating in 500MHz to 2500MHz frequency band using GaN devices. The realized power amplifier has 50W continuous-wave(CW) output power with 100W peak power capability and ideally suited in electronic warfare and wideband communication applications. This SSPA is capable of handling 2GHz instantaneous bandwidth and operates with +24V DC supply. The module has 50dB power gain and is developed to amplify 2GHz white noise signal. The SSPA performance is verified for -30 degrees C to +55 degrees C ambient temperature operation.
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页数：4
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