Low-cost coolerless integrated laser-modulator for 10 Gbit/s transmissions at 1.5μm

被引：2

作者：

Debrégeas-Sillard, H ^{[1
]}

Le Pallec, M ^{[1
]}

Provost, JG ^{[1
]}

Carpentier, D ^{[1
]}

Kazmierski, C ^{[1
]}

机构：

[1] Alcatel CIT Opto, F-91460 Marcoussis, France

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 21期

关键词：

D O I：

10.1049/el:20046056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For short and medium reach network applications, a low-cost and high performance integrated laser-electroabsorption modulator source for 1.5 mum transmissions is proposed. Coolerless and isolator-free 10 Gbit/s transmission over 50 km, for temperature ranging from 10 to 80degreesC is demonstrated.

引用

页码：1367 / 1369

页数：3

共 50 条

[31] Electroabsorption modulator laser for cost-effective 40 Gbit/s networks with low drive voltage, chirp and temperature dependence
Aubin, G.
Seoane, J.
Merghem, K.
Berger, M. S.
Jespersen, C. F.
Garreau, A.
Blache, F.
Jany, C.
Provost, J. -G.
Kazmierski, C.
Jeppesen, P.
ELECTRONICS LETTERS, 2009, 45 (24) : 1263 - U100
[32] HIGH-POWER MODULATOR INTEGRATED DFB LASER INCORPORATING STRAIN-COMPENSATED MQW AND GRADED SCH MODULATOR FOR 10GBIT/S TRANSMISSION
MORITO, K
SAHARA, R
SATO, K
KOTAKI, Y
SODA, H
ELECTRONICS LETTERS, 1995, 31 (12) : 975 - 976
[33] A 2.5-GBIT/S RETURN-TO-ZERO INTEGRATED DBR LASER MODULATOR TRANSMITTER
RAYBON, G
FROBERG, NM
KOREN, U
MILLER, BI
YOUNG, MG
CHIEN, M
JOHNSON, AM
HANSEN, PB
BURRUS, CA
VESELKA, JJ
GNAUCK, AH
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (11) : 1330 - 1331
[34] Zero-bias and low-chirp, monolithically integrated 10Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate
Sahlen, O
Lundqvist, L
Funke, S
ELECTRONICS LETTERS, 1996, 32 (02) : 120 - 122
[35] 25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
Fujisawa, T.
Arai, M.
Fujiwara, N.
Kobayashi, W.
Tadokoro, T.
Tsuzuki, K.
Akage, Y.
Iga, R.
Yamanaka, T.
Kano, F.
ELECTRONICS LETTERS, 2009, 45 (17) : 900 - 901
[36] 40 GHz monolithic integrated 1.3 μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
Knödl, T
Hanke, C
Saravanan, BK
Peschke, M
Macaluso, R
Stegmüller, B
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 675 - 676
[37] 1.5 Gbit/s/channel operation of multiple-wavelength vertical-cavity photonic integrated emitter arrays for low-cost multimode WDM local-area networks
Hu, SY
Zhang, SZ
Ko, J
Bowers, JE
Coldren, LA
ELECTRONICS LETTERS, 1998, 34 (08) : 768 - 770
[38] Mach-Zehnder modulator integrated with a gain-coupled DFB laser for 10Gbit/s, 100km NDSF transmission at 1.55 mu m
Adams, DM
Rolland, C
Puetz, N
Moore, RS
Shepherd, FR
Kim, HB
Bradshaw, S
ELECTRONICS LETTERS, 1996, 32 (05) : 485 - 486
[39] High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
Frateschi, NC
Zhang, J
Choi, WJ
Gebretsadik, H
Jambunathan, R
Bond, AE
ELECTRONICS LETTERS, 2004, 40 (02) : 140 - 141
[40] A SMALL-DISTORTION AND LOW-COST STARK MODULATOR FOR LASER STARK MODULATION SPECTROSCOPY
OKUDE, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (03): : 567 - 568

← 1 2 3 4 5 →