Strong localization in weakly disordered epitaxial graphene

被引：3
|
作者：
Slawig, Diana [1 ]
Gruschwitz, Markus [2 ]
Tegenkamp, Christoph [1 ,2 ]
机构：
[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany
[2] Tech Univ Chemnitz, Inst Phys, Reichenhainer Str 70, D-09126 Chemnitz, Germany
来源：
SURFACE SCIENCE | 2021年 / 707卷
关键词：
Graphene; Atomic hydrogen adsorption; Surface transport; Metal insulator transition; Ioffe-Regel criterion; HYDROGEN ADSORPTION; BAND-GAP; STORAGE; ATOMS;
D O I：
10.1016/j.susc.2021.121801
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied the adsorption of atomic hydrogen on monolayer graphene and quasi free monolayer graphene, epitaxially grown on SiC(0001). By means of in-situ surface transport measurements, a metal-insulator transition was found on both n- and p-type doped two dimensional electron systems. The detailed analysis of the temperature dependent resistivity revealed that even ultra-low concentrations (n(H) approximate to 10(12) cm(-2)) of locally chemisorbed H-clusters act as effective scattering centers for the propagating electrons and limit the mean-free path L-0 proportional to 1/root n(H). Despite the weak disorder due to adsorption, strong localization was found. The activation energy for destroying the phase coherence within the system is around 30 meV. Our analysis rules out the formation of a band insulator or even a "bad metal" due to adsorption of hydrogen.
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页数：6
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