Thermoelectric and electrical properties of GaN and InN single crystals

被引：0

作者：

Matsumoto, T. ^{[1
]}

Kaiwa, N.

Yamaguchi, S. ^{[1
]}

Yamamoto, A. ^{[2
]}

Funa, M. ^{[3
]}

Kawakami, Y. ^{[3
]}

机构：

[1] Kanagawa Univ, High Tech Res Cent, Yokohama, Kanagawa 2218686, Japan

[2] AIST, Natl Adv Und Sci & Technol, Tsukuba, Ibaraki, Japan

[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

thermoelectrics; InN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermoelectric conversion can convert the thermal energy directly into electrical energy. This characteristic is very important to solve the environmental problem. We have studied the temperature dependence of thermoelectric properties of free-standing HVPE-grown GaN, MOVPE-grown GaN and InN epitaxial layers. We have estimated temperature dependence of effective electron effective mass (m*) of InN.

引用

页码：323 / +

页数：2

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