Nucleation, coarsening and deformation accommodation mechanisms of ε-martensite in a high manganese steel

被引:28
|
作者
Pramanik, Sudipta [1 ]
Gazder, Azdiar A. [2 ]
Saleh, Ahmed A. [1 ]
Pereloma, Elena, V [1 ,2 ]
机构
[1] Univ Wollongong, Sch Mech Mat Mechatron & Biomed Engn, Wollongong, NSW 2522, Australia
[2] Univ Wollongong, Electron Microscopy Ctr, Wollongong, NSW 2500, Australia
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2018年 / 731卷
基金
澳大利亚研究理事会;
关键词
High Mn steel; Plane strain compression; Phase transformations; Electron back-scattering diffraction (EBSD); Transmission electron microsocpy (TEM); STACKING-FAULT ENERGY; SHAPE-MEMORY ALLOY; STRESS-INDUCED MARTENSITE; INDUCED-PLASTICITY STEEL; X-RAY-DIFFRACTION; STAINLESS-STEEL; PHASE-TRANSFORMATION; AUSTENITIC STEELS; HCP EPSILON; TWIP-STEEL;
D O I
10.1016/j.msea.2018.06.024
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The nucleation, coarsening and deformation accommodation mechanisms of epsilon-martensite in an Fe-17Mn-3A1-2Si-1Ni-0.06C wt.% high manganese steel subjected to plane strain compression and cold-rolling up to 88% thickness reduction was studied using a combination of electron microscopy techniques. Intrinsic stacking faults in gamma-austenite led to the nucleation of fine deformation-induced epsilon-martensite laths. In accordance with previous observations, the lateral coarsening of deformation-induced epsilon-martensite laths occurred via their coalescence with neighbouring epsilon-martensite plates/laths. Electron back-scattering diffraction and high-angle annular dark-field observations showed that epsilon-martensite accommodates deformation via a combination of perfect and partial basal slip, pyramidal slip and {10<(1)overbar>2} & LANG;<(1)overbar>011 & RANG;(epsilon) extension twinning. The operation of partial basal slip; generating I-1 and I-2-type basal stacking faults at smaller thickness reductions and thereafter, only I-1-type stacking faults at larger thickness reductions was observed in epsilon-martensite. Consequently, a mechanism that enables a transition from epsilon-martensite I-2 to I-1-type stacking faults is proposed.
引用
收藏
页码:506 / 519
页数:14
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