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Modeling anisotropic magnetoresistance in layered antiferromagnets
被引:1
|作者:
Santos, D. L. R.
[1
,2
,3
]
Pinheiro, F. A.
[4
]
Velev, J.
[5
,6
,7
,8
]
Chshiev, M.
[6
,7
,8
]
d'Albuquerque e Castro, J.
[4
]
Lacroix, C.
[1
,2
]
机构:
[1] CNRS, Inst Neel, Boite Postale 166, F-38042 Grenoble 09, France
[2] Univ Grenoble Alpes, Boite Postale 166, F-38042 Grenoble 09, France
[3] Ctr Fed Educ Tecnol, BR-23812101 Itaguai, RJ, Brazil
[4] Univ Fed Rio de Janeiro, Inst Fis, Caixa Postal 68528, BR-21941972 Rio De Janeiro, RJ, Brazil
[5] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[6] Univ Grenoble Alpes, INAC SPINTEC, F-38000 Grenoble, France
[7] CNRS, SPINTEC, F-38000 Grenoble, France
[8] CEA, INAC SPINTEC, F-38000 Grenoble, France
关键词:
layered antiferromagnetic systems;
anisotropic magnetoresistance;
nanostructured systems;
SPIN-ORBIT TORQUE;
D O I:
10.1088/1361-648X/aa6b2b
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin-orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin-orbit parameter.
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页数:7
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