Modeling anisotropic magnetoresistance in layered antiferromagnets

被引:1
|
作者
Santos, D. L. R. [1 ,2 ,3 ]
Pinheiro, F. A. [4 ]
Velev, J. [5 ,6 ,7 ,8 ]
Chshiev, M. [6 ,7 ,8 ]
d'Albuquerque e Castro, J. [4 ]
Lacroix, C. [1 ,2 ]
机构
[1] CNRS, Inst Neel, Boite Postale 166, F-38042 Grenoble 09, France
[2] Univ Grenoble Alpes, Boite Postale 166, F-38042 Grenoble 09, France
[3] Ctr Fed Educ Tecnol, BR-23812101 Itaguai, RJ, Brazil
[4] Univ Fed Rio de Janeiro, Inst Fis, Caixa Postal 68528, BR-21941972 Rio De Janeiro, RJ, Brazil
[5] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[6] Univ Grenoble Alpes, INAC SPINTEC, F-38000 Grenoble, France
[7] CNRS, SPINTEC, F-38000 Grenoble, France
[8] CEA, INAC SPINTEC, F-38000 Grenoble, France
关键词
layered antiferromagnetic systems; anisotropic magnetoresistance; nanostructured systems; SPIN-ORBIT TORQUE;
D O I
10.1088/1361-648X/aa6b2b
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin-orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin-orbit parameter.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Magnetostriction and a magnetoelastic mechanism for the irreversible behavior of the magnetoresistance in layered antiferromagnets
    Gomonay, EV
    Loktev, VM
    LOW TEMPERATURE PHYSICS, 2001, 27 (04) : 325 - 332
  • [2] Temperature dependence of interlayer magnetoresistance in anisotropic layered metals
    Brinkman, Braden A. W.
    Kennett, Malcolm P.
    PHYSICAL REVIEW B, 2009, 80 (09):
  • [3] New features of magnetoresistance in highly anisotropic layered metals
    Grigoriev, P. D.
    LOW TEMPERATURE PHYSICS, 2011, 37 (9-10) : 738 - 743
  • [4] Magnetoresistance of multiaxial antiferromagnets
    Vlasov, KB
    Zainullina, RI
    Ustinov, VV
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 161 : 189 - 194
  • [5] Anisotropic antiferromagnets
    Gulácsi, M
    McCulloch, I
    GROUP 22: PROCEEDINGS OF THE XII INTERNATIONAL COLLOQUIUM ON GROUP THEORETICAL METHODS IN PHYSICS, 1998, : 193 - 197
  • [6] Modeling of Anisotropic Magnetoresistance Properties of Permalloy Nanostructures
    Manzin, Alessandra
    Nabaei, Vahid
    Corte-Leon, Hector
    Kazakova, Olga
    Krzysteczko, Patryk
    Schumacher, Hans Werner
    IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (04)
  • [7] Giant anisotropic magnetoresistance at low magnetic fields in a layered semiconductor
    Murakawa, H.
    Nakaoka, Y.
    Kida, T.
    Hagiwara, M.
    Sakai, H.
    Hanasaki, N.
    PHYSICAL REVIEW MATERIALS, 2022, 6 (05)
  • [8] Competing interactions and anisotropic magnetoresistance in layered CeTe2
    Jung, MH
    Umeo, K
    Fujita, T
    Takabatake, T
    PHYSICAL REVIEW B, 2000, 62 (17) : 11609 - 11613
  • [9] Electron correlations and charge segregation in layered manganese pnictide antiferromagnets showing anomalously large magnetoresistance
    Jansa, N.
    Huynh, K-K
    Ogasawara, T.
    Klanjsek, M.
    Jeglic, P.
    Carretta, P.
    Tanigaki, K.
    Arcon, D.
    PHYSICAL REVIEW B, 2021, 103 (06)
  • [10] Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2
    Zhu, Rui
    Gao, Zhibin
    Liang, Qijie
    Hu, Junxiong
    Wang, Jian-Sheng
    Qiu, Cheng-Wei
    Wee, Andrew Thye Shen
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (31) : 37527 - 37534