A novel method to dope silicon nanowires with Er ions

被引：0

作者：

Ren, Lingling ^{[1
]}

Choi, Heon-Jin ^{[1
]}

Jeung, Won young ^{[1
]}

机构：

[1] Yonsei Univ, Sch Adv Mat Sci & Engn, Seoul 120749, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2006年 / 7卷 / 04期

关键词：

Er ion; silicon nanowires; VLS mechanism; sol-gel;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel method was applied to grow silicon nanowires; (Si-NWs) doped with Er ions. At first the gold nanoparticles were sputtered to clean Si (100) surfaces, they were then coated with Si or Al source sol-gel solutions. Finally, the Si-NWs grew by a vapor-liquid-solid (VLS) mechanism, at the same time, the coating layers were sintered to oxide layers. This method was easy and lessened energy consumes. The oxide-doping layer was so thin that our eyes cannot observe it.

引用

页码：332 / 335

页数：4

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