Atomic insight into spin, charge and lattice modulations at SrFeO3-x/SrTiO3 interfaces

被引:9
|
作者
Xu, Kun [1 ,2 ]
Gu, Youdi [3 ,4 ]
Song, Cheng [3 ]
Zhong, Xiaoyan [1 ,5 ,6 ]
Zhu, Jing [1 ,2 ]
机构
[1] Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Key Lab Adv Mat MOE, State Key Lab New Ceram & Fine Proc,Sch Mat Sci &, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Cent Nano & Micro Mech, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[4] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
[5] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China
[6] City Univ Hong Kong, Nanomfg Lab NML, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1039/d0nr07697j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel phenomena and functionalities at interfaces of oxide heterostructures are currently of great interest in a wide range of applications. At such interfaces, charge, spin, orbital and lattice ordering coexist and correlate closely, contributing to rich functional responses. By using atomically resolved imaging and spectroscopy techniques, we investigated magnetic behaviors and structural modulation at the SrFeO3-x/SrTiO3 interface. Fe/Ti element intermixing and oxygen vacancies occurred across a few unit cells at the interface. Furthermore, antiferromagnetic spin ordering of Fe with different valence states in the interface of SrFeO3-x/SrTiO3 induced uncompensated magnetic moments. Compared to the SrFeO3-x/La0.3Sr0.7Al0.65Ta0.35O3 heterojunction, the variations of charge and lattice order parameters at the SrFeO3-x/SrTiO3 interfaces were also determined by advanced electron microscopy, which provided a good understanding of the physical origin of disparate macroscopic magnetic properties, further investigated by magnetometer measurements and X-ray magnetic circular dichroism (XMCD) spectra. These studies provide comprehensive insight into the interfacial modulation of ferrite oxide, which may be useful for designing future devices in oxide electronics.
引用
收藏
页码:6066 / 6075
页数:11
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