Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

被引：5
|
作者：
Kamata, I. [1 ]
Nagano, M. [1 ]
Tsuchida, H. [1 ]
机构：
[1] CRIEPI, Kanagawa 2400196, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
Topography; TED; BPD; Burgers vector; KOH etch pit; EPITAXIAL-GROWTH;
D O I：
10.4028/www.scientific.net/MSF.645-648.303
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
Burgers vector directions of threading edge dislocations (TEDs) in 4H-SiC epitaxial layer are distinguished by grazing incidence high resolution topography. Based on comparison between appearance of KOH etch pits and direction of TED Burgers vector, the size difference of the TED etch pits is found to be dependent on their Burgers vector directions. Examining TEDs in the epilayer by topography, the Burgers vector direction of basal plane dislocations (BPDs) in the substrate is identified. Correspondence between the topography contrast and the sense of a BPD is also investigated.
引用
收藏
页码：303 / 306
页数：4
相关论文
共 50 条
  • [31] Why are only some basal plane dislocations converted to threading edge dislocations during SiC epitaxy?
    Zhang, Z.
    Shrivastava, A.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 419 - +
  • [32] Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC
    Li, Jiajun
    Wang, Yazhe
    Zhu, Ruzhong
    Pi, Xiaodong
    Yang, Deren
    Wang, Rong
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (05) : 2664 - 2669
  • [33] The dissociation modes of threading screw dislocations in 4H-SiC
    Onda, Shoichi
    Watanabe, Hiroki
    Kitou, Yasuo
    Kondo, Hiroyuki
    Uehigashi, Hideyuki
    Hisada, Yoshiki
    Shiraishi, Kenji
    Saka, Hiroyasu
    PHILOSOPHICAL MAGAZINE LETTERS, 2013, 93 (10) : 591 - 600
  • [34] The effect of shear on nucleation and movement of basal plane dislocations in 4H-SiC
    Yang, Yanwei
    Li, Keqiang
    Tong, Zhouyu
    Pi, Xiaodong
    Yang, Deren
    Huang, Yuanchao
    JOURNAL OF APPLIED PHYSICS, 2024, 136 (04)
  • [35] Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy
    Zhang, X.
    Skowronski, M.
    Liu, K.X.
    Stahlbush, R.E.
    Sumakeris, J.J.
    Paisley, M.J.
    O'Loughlin, M.J.
    1600, American Institute of Physics, 2 Huntington Quadrangle, Suite N101, Melville, NY 11747-4502, United States (102):
  • [36] Doping-dependent nucleation of basal plane dislocations in 4H-SiC
    Liu, Xiaoshuang
    Wang, Rong
    Zhang, Junran
    Lu, Yunhao
    Zhang, Yiqiang
    Yang, Deren
    Pi, Xiaodong
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (33)
  • [37] Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping
    Feng, Gan
    Suda, Jun
    Kimoto, Tsunenobu
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [38] Evolution of Basal Plane Dislocations During 4H-SiC Epitaxial Growth
    Stahlbush, R. E.
    VanMil, B. L.
    Liu, Kx
    Lew, K. K.
    Myers-Ward, R. L.
    Gaskill, D. K.
    Eddy, C. R., Jr.
    Zhang, X.
    Skowronski, M.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 317 - +
  • [39] Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy
    Zhang, X.
    Skowronski, M.
    Liu, K. X.
    Stahlbush, R. E.
    Sumakeris, J. J.
    Paisley, M. J.
    O'Loughlin, M. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
  • [40] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
    Kamata I.
    Tsuchida H.
    Vetter W.M.
    Dudley M.
    Journal of Materials Research, 2007, 22 (4) : 845 - 849
12345