A novel area efficient floating field limiting ring edge termination technique

被引：19
|
作者：
De Souza, MM
Bose, JVSC
Narayanan, EMS
Pease, TJ
Ensell, G
Humphreys, J
机构：
[1] De Montfort Univ, SER Ctr, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England
[2] Univ Southampton Highfields, Ctr Microelect, Southampton, Hants, England
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/S0038-1101(00)00077-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a floating ring edge termination structure using minimally sized lightly doped p-rings is proposed. A novel embodiment of the structure involves placement of shallow p(+)-regions offset from the centre of each of the p-well rings to reduce peak electric field at the surface and to reduce sensitivity to oxide interface charges. The structures have been fabricated using an advanced, 2 kV MOS-bipolar process technology. A close match between the simulated and experimental results validates the proposed structure. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1381 / 1386
页数：6
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