Pore-size dependence of the thermal conductivity of porous silicon: A phonon hydrodynamic approach

被引：106

作者：

Alvarez, F. X. ^{[1
]}

Jou, D. ^{[1
,2
]}

Sellitto, A. ^{[3
]}

机构：

[1] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Catalonia, Spain

[2] Inst Estudis Catalans, Barcelona 08001, Catalonia, Spain

[3] Univ Basilicata, Dept Math & Comp Sci, I-85100 Potenza, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

elemental semiconductors; phonons; porosity; porous semiconductors; silicon; thermal conductivity; PERIODIC ARRAY; SLOW FLOW; TEMPERATURE; LAYERS;

D O I：

10.1063/1.3462936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phonon hydrodynamics is used to analyze the influence of porosity and of pore size on reduction in thermal conductivity in porous silicon, with respect to crystalline silicon. The expressions predict that the thermal conductivity is lower for higher porosity and for smaller pore radius, as a consequence of phonon ballistic effects. The theoretical results describe experimental data better than the assumption that they only depend on porosity. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462936]

引用

页数：3

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