Photoluminescence studies of GaAs/partially ordered GaInP quantum wells grown by metalorganic vapor phase epitaxy

被引：2
|
作者：
Kobayashi, T [1 ]
Tomoda, H
Prins, AD
Homma, Y
Uchida, K
Nakahara, J
机构：
[1] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
[2] Univ London Queen Mary & Westfield Coll, London E1 4NS, England
[3] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
[4] Hokkaido Univ, Grad Sch Sci, Div Phys, Sapporo, Hokkaido 0600812, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 235卷 / 02期
关键词：
D O I：
10.1002/pssb.200301568
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the results of a study on GaAs/partially ordered Ga0.5In0.5P quantum wells using up-converted photoluminescence (UPL), in which a sample emits photons with an energy (1.89 eV) higher than that of the excitation photon (1.58 eV), together with the normal photoluminescence (PL) excited at a photon energy higher than that of the GaInP band gap and at high pressures up to similar to5 GPa. Both the similar to1.46 eV emission and the UPL observed in this work provide new evidence of a type 11 band alignment.
引用
收藏
页码：277 / 281
页数：5
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