Investigation of the short-circuit performance of an IGBT

被引：41
|
作者：
Trivedi, M [1 ]
Shenai, K [1 ]
机构：
[1] Univ Illinois, Syst SIlicon Res Ctr, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 01期
关键词：
D O I：
10.1109/16.658847
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the internal dynamics of insulated gate bipolar transistors (IGBT's) under short-circuit switching conditions. Short-circuit performance of IGBT's has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced two-dimensional (2-D) mixed device and circuit simulator that incorporates the self-heating mechanism has been employed to examine IGBT behavior under short-circuit stress, Latch-up free punchthrough IGBT has been examined, It is shown that hot-spot generation due to current crowding and impact ionization is the cause of breakdown of an IGBT under short-circuit switching.
引用
收藏
页码：313 / 320
页数：8
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