An Equivalent Lumped-circuit Model for On-chip Symmetric Intertwined Transformer

被引:6
|
作者
Kang, Jin [1 ]
Sun, Lingling [1 ]
Wen, Jincai [1 ]
Zhao, Mingfu [1 ]
机构
[1] Hangzhou Dianzi Univ, Key Lab RF Circuit & Syst, Minist Educ, Hangzhou 310018, Peoples R China
关键词
On-chip symmetric intertwined transformer; equivalent lumped-circuit; substrate loss; skin effect; SPIRAL INDUCTORS; AMPLIFIER; SILICON; DESIGN; RFICS;
D O I
10.1109/ASICON.2009.5351336
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A physics-based equivalent lumped-circuit model for on-chip symmetric intertwined transformer is presented in this paper. This model accurately predicts the skin effect and proximity effect of the primary and secondary coils inductors over a wide-frequency range using a ladder '4-element' structure,respectively. One transformer loop and two RC networks are used to model the substrate loss related to substrate eddy current loss and capacitive and reactive effect of lateral substrate coupling. Two transformers were fabricated on a standard 0.18-um 1P6M RE CMOS technology to further verify the accuracy of the proposed model(1).
引用
收藏
页码:674 / 677
页数:4
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