Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent

被引：454
|
作者：
Taniguchi, T. [1 ]
Watanabe, K. [1 ]
机构：
[1] Natl Inst Mat Sci, Adv Nanomat Lab, High Pressure Grp, Tsukuba, Ibaraki 3050044, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 02期
基金：
日本学术振兴会;
关键词：
impurities; growth from high-temperature solutions; high-pressure crystal growth; boron nitride; semiconducting III-V materials; ultraviolet light luminescence;
D O I：
10.1016/j.jcrysgro.2006.12.061
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 degrees C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10(18) atoms/cm(3), were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：525 / 529
页数：5
相关论文
共 50 条
12345