Thin film CulnS2 prepared by spray pyrolysis with single-source precursors

被引：5

作者：

Jin, MH ^{[1
]}

Banger, KK ^{[1
]}

Harris, JD ^{[1
]}

Cowen, JE ^{[1
]}

Hepp, AF ^{[1
]}

机构：

[1] Ohio Aerosp Inst, Brookpark, OH 44142 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190654

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Both horizontal hot-wall and vertical cold-wall. atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials. were. used. for this - study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 degreesC. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega .cm.

引用

页码：672 / 675

页数：4

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