Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard

被引：0
|
作者：
Hernandez-Marquez, F. [1 ]
Rivera-Alvarez, Z. [2 ]
Guillen, A. [2 ]
Huerta-Ruelas, J. [3 ]
Hernandez, I. C. [4 ]
Mendez-Garcia, V. H. [5 ]
Lopez-Lopez, M. [2 ]
机构：
[1] Ctr Nacl Metrol, Km 4-5 Carretera Los Cues, El Marques 76241, Mexico
[2] IPN, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City, DF, Mexico
[3] IPN, Ctr Invest Ciencia Aplicada & Technol Avanzada, Queretaro, Mexico
[4] Lasertel Inc, Tucson, AZ 85743 USA
[5] Univ Autonoma San Luis Potosi, Inst Invest Commun Optica, San Luis Potosi, Mexico
来源：
2006 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING | 2006年
关键词：
AlGaAs/GaAs heterostructures; quantum hall effect; longitudinal resistance; ohmic contact;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the last few years we have been working in order to obtain a Resistance Standard using the Quantum Hall Effect (QHE). Several AlGaAs/GaAs structures and a variety of' ohmic contacts procedures have been evaluated to achieve devices with metrological quality. Recently we have obtained devices with the following characteristics: The resistance plateau corresponding to the quantum number i = 2 is obtained for a magnetic flux density in the order of 7 T at 1.3 K, the residual value of the longitudinal resistance is 107 mu Omega for a current of 50 mu A. These characteristics are comparable with those obtained in QHE devices used at Centro Nacional de Metrologia (CENAM). Such results show that the developed devices have the quality required for reference standard dc resistance measurements.
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页码：237 / +
页数：2
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