Study of point defects in silicon by means of positron annihilation with core electrons

被引：5
|
作者：
Kuriplach, J
Van Hoecke, T
Van Waeyenberge, B
Dauwe, C
Segers, D
Balcaen, N
Morales, AL
Trauwaert, MA
Vanhellemont, J
Sob, M
机构：
[1] State Univ Ghent, Dept Subatom & Radiat Phys, NUMAT, B-9000 Ghent, Belgium
[2] Charles Univ, Dept Low Temp Phys, CZ-18000 Prague 8, Czech Republic
[3] Univ Antioquia, Dept Phys, Medellin AA 1226, Colombia
[4] IMEC, B-3001 Louvain, Belgium
[5] Acad Sci Czech Republ, Inst Phys Mat, CZ-61662 Brno, Czech Republic
来源：
POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997 | 1997年 / 255-2卷
关键词：
positron annihilation spectroscopy; momentum distribution; defects in Si; core electrons; VACANCY;
D O I：
10.4028/www.scientific.net/MSF.255-257.605
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.
引用
收藏
页码：605 / 607
页数：3
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