共 50 条
- [1] Study on defects of solar cell silicon irradiated with 1 MeV electrons by positron annihilation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (08): : 4693 - 4698
- [3] POSITRON-ANNIHILATION STUDY OF DEFECTS CREATED IN SILICON IRRADIATED WITH ELECTRONS OF HIGH-ENERGY PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01): : 129 - 138
- [4] Study of point defects in silicon by means of positron annihilation with core electrons Mater Sci Forum, (605-607):
- [5] Study of point defects in silicon by means of positron annihilation with core electrons POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 605 - 607
- [7] STUDY OF DEFECTS IN ELECTRON-IRRADIATED SILICON BY VOLUME SPECTROSCOPY AND POSITRON-ANNIHILATION METHOD KHIMICHESKAYA FIZIKA, 1993, 12 (11): : 1512 - 1518
- [8] Positron annihilation study of defects in GaAs irradiated by fission neutron Nuclear Science and Techniques/Hewuli, 1997, 8 (01): : 30 - 32
- [10] Positron annihilation study of defects in fission neutron irradiated GaAs He Jishu/Nuclear Techniques, 21 (02): : 102 - 104