3D source simulation method for static fields in inhomogeneous media

被引:7
|
作者
Canova, Aldo
Gruosso, Giambattista
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[2] Politecn Torino, Dipartimento Ingn Elettr, I-10129 Turin, Italy
关键词
charge simulation method; static field; electrostatic; dielectric; capacitance; grounding system; CHARGE SIMULATION;
D O I
10.1002/nme.1923
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, an integral approach based on the source simulation method (SSM) for the solution of three dimensional (3D) static electric fields is presented. This is an extension of the well-known charge simulation method to the electric and current static fields. The formulation allows the solution of 3D electrostatic or static current field problems, where several perfectly conducting bodies (electrodes) are placed in inhomogeneous media. Only electrode surfaces and dielectric interfaces need to be discretized by triangular elements. Matrix coefficients are accurately evaluated by using closed integral forms of 1/r and of grad(1/r). Dirichlet and Neumann conditions can be imposed on the different conducting bodies; in particular, floating potential problem can also be solved. The method of images allows ground plane to be taken into account. The procedure has been applied to several practical cases and it represents an efficient tool for the evaluation of lumped circuit parameters such as capacitances of 3D conducting bodies and ground resistances of grounding systems. Copyright (c) 2006 John Wiley & Sons, Ltd.
引用
收藏
页码:1096 / 1111
页数:16
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