Photoreflectance spectroscopy of low-dimensional GaAs/AlGaAs structures

被引：0
|
作者：
Sek, G [1 ]
Misiewicz, J [1 ]
Cheng, TS [1 ]
机构：
[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
来源：
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1997年 / 7卷 / 05期
关键词：
photoreflectance; low-dimensional structure; GaAs; AlGaAs;
D O I：
10.1002/(SICI)1099-0712(199709)7:5<241::AID-AMO312>3.0.CO;2-K
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Results of room-temperature photoreflectance measurements on three GaAs/Al-0.33 Ga0.67As multiquantum well (Mow) structures with three different widths of wells and on two GaAs/Al0.33Ga0.67As high-electron-mobility transistor (HEMT) structures are presented. Energy-gap-related transitions in GaAs and AlGaAs were observed. The Al content in AlGaAs was determined. MQW transition energies were determined using the first derivative of a Gaussian profile of the measured resonances. In order to identify the transitions in the MQS, the experimentally observed energies were compared with results of the envelope function calculation method for a rectangular quantum well. The Franz-Keldysh oscillation (FKO) model was also used to determine the built-in electric field in various parts of the investigated structures. The values of the electric fields allow us to hypothesise about the origin of these fields. (C) 1997 John Wiley & Sons, Ltd.
引用
收藏
页码：241 / 247
页数：7
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