Visible and Near-Infrared Imaging with Nonfullerene-Based Photodetectors

被引:102
|
作者
Gasparini, Nicola [1 ,2 ]
Gregori, Alberto [3 ]
Salvador, Michael [2 ]
Biele, Markus [3 ]
Wadsworth, Andrew [4 ,5 ]
Tedde, Sandro [3 ]
Baran, Derya [2 ]
McCulloch, Iain [2 ,4 ,5 ]
Brabec, Christoph J. [1 ,6 ]
机构
[1] Friedrich Alexander Univ Erlangen Nuremberg, Inst Mat Elect & Energy Technol, Martensstr 7, D-91058 Erlangen, Germany
[2] KAUST, KSC, Thuwal 239556900, Saudi Arabia
[3] Siemens Healthineers, Technol Ctr, Guenther Scharowsky Str 1, D-91058 Erlangen, Germany
[4] Imperial Coll London, Dept Chem, London SW7 2AZ, England
[5] Imperial Coll London, Ctr Plast Elect, London SW7 2AZ, England
[6] Bavarian Ctr Appl Energy Res ZAE Bayern, Haberstr 2a, D-91058 Erlangen, Germany
来源
ADVANCED MATERIALS TECHNOLOGIES | 2018年 / 3卷 / 07期
基金
英国工程与自然科学研究理事会;
关键词
imager; large area devices; near-infrared detection; nonfullerene acceptors; organic photodetectors; ORGANIC SOLAR-CELLS; PHOTODIODES; EFFICIENT; PHOTOTRANSISTORS;
D O I
10.1002/admt.201800104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The solution-processed organic photodetectors underpin an emerging technology with inherent implications in the biological sensors and imaging displays. Conventional organic photodiodes, the core element of an organic photodetector, rely mainly on fullerene-based acceptors, which in combination with high and middle bandgap donors, limit the spectral photosensitivity to the visible range. Even in the case of low bandgap polymers the oscillator strength and thus the extinction coefficient are usually limited in the NIR due to the nature of molecular orbital hybridization. Instead, it is showed that pairing prototypical poly(3-hexylthiophene) (P3 HT) with rhodanine-benzothiadiazolecoupled indacenodithiophene (IDTBR), a nonfullerene electron acceptor absorbing beyond 750 nm, as the photoactive material of a simple photodiode results in a highly efficient organic photodetector with a record responsivity of 0.42 A W-1 and external quantum efficiency (EQE) of 69% in the NIR (755 nm) Nonfullerene-based photodiodes are processed on amorphous silicon active matrix backplanes to realize large area flat panel photodetector imagers able to detect objects under visible and NIR light conditions with an exceptional combination of responsivity, dynamic response and image crosstalk.
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页数:7
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