Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

被引：10
|
作者：
Sandén, M [1 ]
Malm, BG [1 ]
Grahn, JV [1 ]
Östling, M [1 ]
机构：
[1] KTH, Dept Elect, SE-16440 Kista, Sweden
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 11期
关键词：
D O I：
10.1016/S0026-2714(00)00052-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of hydrogen passivation by forming gas annealing (FGA) on the bipolar junction transistor low frequency noise was investigated. The results demonstrated a reduced 1/f noise component by a factor of five after FGA, which resulted in a reduced corner frequency. An equivalent input noise spectral density (S-IB) dependence on base current (IB) of S-IB similar to I-B(2) and on emitter area (A(E)) of S-IB similar to A(E)(-1) was observed, both before and after FGA. The interpretations of the results were (a) the 1/f noise was due to carrier number fluctuation, (b) the noise sources were homogeneously distributed over the polysilicon/monosilicon emitter interfacial oxide, and (c) the noise sources were passivated by hydrogen. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1863 / 1867
页数：5
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