Optical characterization of Er-doped ZnSe for scintillation applications

被引：14

作者：

Nasieka, Iu. ^{[1
]}

Boyko, M. ^{[1
]}

Strelchuk, V. ^{[1
]}

Kovalenko, N. ^{[2
]}

Gerasimenko, A. ^{[2
]}

Starzhinskiy, N. ^{[3
]}

Zhukov, A. ^{[3
]}

Zenya, I. ^{[3
]}

Sofronov, D. ^{[4
]}

机构：

[1] Lashkarev Inst Semicond Phys NAS Ukraine, UA-03028 Kiev, Ukraine

[2] Inst Single Crystals NAS Ukraine, UA-61001 Kharkov, Ukraine

[3] Inst Scintillat Mat NAS Ukraine, UA-61001 Kharkov, Ukraine

[4] SSI Inst Single Crystals NAS Ukraine, UA-61001 Kharkov, Ukraine

来源：

OPTICAL MATERIALS | 2014年 / 38卷

关键词：

ZnSe crystals; Low-temperature photoluminescence; Er-doping; Raman spectroscopy; X-ray luminescence; RAMAN; PHOTOLUMINESCENCE; CRYSTALS; SPECTROSCOPY; ABSORPTION; CENTERS; SPECTRA; FILMS;

D O I：

10.1016/j.optmat.2014.10.052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of Er-doping of ZnSe crystals on luminescence and structural properties was investigated using low-temperature photoluminescence, X-ray luminescence, Raman and IR spectroscopies. It was found that Er dopant atoms with the concentration in the solid phase of about 10(-3) wt.% lead to a substantial disordering of initial crystalline structure. The mentioned processes manifest in substantial decrease of the amplitudes of corresponding vibrational modes and increase of their FWHM in first-order Raman spectra of Er-doped ZnSe crystals. Also, Er-doping stimulates an appearance of additional absorbance bands in IR transmittance spectra. However, Er-doping leads to substantial increase of the efficiency of photoluminescence and X-ray luminescence that is very important for scintillation application. In this case, the luminescence is mainly caused by recombination via defect centers which contain Er atoms incorporated in the ZnSe lattice in different electronic configurations. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：272 / 277

页数：6

共 50 条

[41] Synthesis and characterization of thermally evaporated Er-doped SnO2 thin films for photonic applications
Yadav, Sunny
Yadav, Kavita
Dhar, Rakesh
Mohan, Devendra
MICRO AND NANOSTRUCTURES, 2023, 174
[42] Nitrogen-ion-implanted planar optical waveguides in Er-doped tellurite glass:: fabrication and characterization
Banyasz, I.
Berneschi, S.
Cacciari, I.
Fried, M.
Lohner, T.
Nunzi-Conti, G.
Paszti, F.
Pelli, S.
Petrik, P.
Righini, G. C.
Watterich, A.
Zolnai, Z.
OPTICAL COMPONENTS AND MATERIALS V, 2008, 6890
[43] EPR, optical, and dielectric spectroscopy of Er-doped cerium dioxide nanoparticles
Rakhmatullin, R. M.
Kurkin, I. N.
Pavlov, V. V.
Semashko, V. V.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (08): : 1545 - 1551
[44] Device aspects of Er-doped Si structures for optoelectric interconnect applications
Ni, WX
Du, CX
Joelsson, KB
Pozina, G
Duteil, F
Hansson, GV
PHYSICA SCRIPTA, 1999, T79 : 143 - 148
[45] Visible and Infrared Luminescence and Applications of Er-doped AlN Thin Films
Wang, Zhiyuan
Zhang, Feihong
Golovynskyi, Sergii
Sun, Zhenhua
Li, Baikui
Wu, Honglei
2022 IEEE 7TH OPTOELECTRONICS GLOBAL CONFERENCE, OGC, 2022, : 183 - 186
[46] Effects of optical feedback on backward Er-doped fiber superfluorescent sources
Su, CD
Wang, LA
OPTICAL FIBER COMMUNICATION, 1998, 3420 : 330 - 336
[47] AUTOMATIC OPTICAL-LOSS COMPENSATION WITH ER-DOPED FIBER AMPLIFIER
OKAMURA, H
ELECTRONICS LETTERS, 1991, 27 (23) : 2155 - 2156
[48] Upconversion luminescence dynamics of Er-doped fluoride crystals for optical converters
Ivanova, S.
Pelle, F.
Tkachuk, A.
Joubert, M. -F.
Guyot, Y.
Gapontzev, V. P.
JOURNAL OF LUMINESCENCE, 2008, 128 (5-6) : 914 - 917
[49] Optical properties of Er-doped As-S-Ge chalcogenide glasses
Petrovic, V. B.
Strbac, D. D.
Gut, I. O.
Lukic, S. R.
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (12): : 2035 - 2038
[50] Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers
Nepal, N.
Zavada, J. M.
Dahal, R.
Ugolini, C.
Sedhain, A.
Lin, J. Y.
Jiang, H. X.
APPLIED PHYSICS LETTERS, 2009, 95 (02)

← 1 2 3 4 5 →