Wet oxidation kinetics of AlAs at elevated temperatures

被引：6
|
作者：
Ko, SC [1 ]
Lee, S
Wang, HL
Chou, YT
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Chunghwa Telecom Co, Telecommun Labs, Adv Technol Res Lab, Taoyuan, Taiwan
[3] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA
来源：
JOURNAL OF MATERIALS RESEARCH | 2003年 / 18卷 / 05期
关键词：
D O I：
10.1557/JMR.2003.0140
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Wet oxidation in the AlAs layer sandwiched between two GaAs plates was investigated for the temperature range of 400 to 480 degreesC. The oxidation rate increased with increasing thickness of the AlAs layer. Theoretical analysis based on the boundary layer diffusion was performed to account for the thickness effect. The theory is in excellent agreement with the experimental measurement.
引用
收藏
页码：1027 / 1030
页数：4
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