Shape transformation of Ge quantum dots due to Si overgrowth

被引：10
|
作者：
Kirfel, O [1 ]
Müller, E
Grützmacher, D
Kern, K
机构：
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Ecole Polytech Fed Lausanne, Inst Phys Nanostruct, CH-1012 Lausanne, Switzerland
[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 3-4期
关键词：
scanning tunnelling microscopy; transmission electron microscopy; quantum dots;
D O I：
10.1016/S1386-9477(02)00638-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The optimisation of the opto-electronic properties of Ge dots embedded in Si requires the precise control of their structural properties. In the present study we investigated the initial stages of overgrowth using transmission electron microscopy (TEM), energy resolved TEM and in situ scanning tunnelling microscopy. It is found that Ge dome clusters and Ge hut clusters behave differently during the overgrowth by Si. Ge domes transform back into hut clusters after the deposition of 5 Monolayers of Si, thus they decrease in height and increase in diameter. Ge hut clusters increase in height and diameter during Si overgrowth. The changes in shape are accompanied by local changes in the strain and composition of the dot. The presented data give detailed insights into the shape and composition of Ge quantum dots before and after embedding in Si. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：602 / 608
页数：7
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