Refractive index of In1-xGaxAsyP1-y lattice-matched to InP in IR-transparent and absorption region

被引：0
|
作者：
Seifert, Sten [1 ]
Runge, Patrick [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, D-10587 Berlin, Germany
来源：
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2014年
关键词：
LAYERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For several compositions of In1-xGaxAsyP1-y lattice-matched to InP spectroscopic measurements were made. With the help of the Tanguy model, the refractive indices are calculated in the infrared transparent and absorption region. From these measurements general parameters for the Tanguy model are derived for the In1-xGaxAsyP1-y material system lattice-matched to InP.
引用
收藏
页数：2
相关论文
共 50 条
  • [41] OPTICAL STUDY OF VALENCE-BAND SPLITTING IN WEAKLY STRAINED IN1-XGAXASYP1-Y/INP HETEROSTRUCTURES
    WEIHOFEN, R
    WEISER, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 179 (02): : 563 - 577
  • [42] In1-xGaxAsyP1-y/InP异质结的可控重复液相外延生长
    蔡开清
    赵兴伦
    李东平
    半导体光电, 1982, (04) : 3 - 6
  • [43] Transmission electron microscopy and photoluminescence studies of In1-xGaxAsyP1-y films grown on <100> InP substrates
    Okada, T
    LaPierre, R
    Mullan, C
    Weatherly, GC
    Robinson, BJ
    Thompson, DA
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 253 - 256
  • [44] CALCULATIONS OF OPTICAL-CONSTANTS FOR GAXIN1-XPYAS1-Y ALLOYS LATTICE-MATCHED TO INP
    XU, ZZ
    CHINESE PHYSICS, 1990, 10 (02): : 477 - 480
  • [45] Strain and relaxation processes in In1-xGaxAsyP1-y/InP single quantum wells grown by LP-MOVPE
    Bernussi, AA
    Carvalho, W
    Furtado, MT
    Gobbi, AL
    BRAZILIAN JOURNAL OF PHYSICS, 1999, 29 (04) : 746 - 750
  • [46] SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE IN1-XGAXASYP1-Y/INP HETEROJUNCTIONS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION
    DREVILLON, B
    BERTRAN, E
    ALNOT, P
    OLIVIER, J
    RAZEGHI, M
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3512 - 3518
  • [47] P-N-JUNCTION DIODES IN INP AND IN1-XGAXASYP1-Y FABRICATED BY BERYLLIUM-ION IMPLANTATION
    ARMIENTO, CA
    DONNELLY, JP
    GROVES, SH
    APPLIED PHYSICS LETTERS, 1979, 34 (03) : 229 - 231
  • [48] 基于InP/In1-xGaxAsyP1-y加载条状波导的宽带波长转换数值研究
    文进
    何晨瑶
    秦韦俊
    孙伟
    梁伯植
    熊科宇
    张辉
    武政委
    于慧敏
    王倩
    光子学报, 2022, 51 (10) : 306 - 315
  • [49] REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION
    ALIBERT, C
    SKOURI, M
    JOULLIE, A
    BENOUNA, M
    SADIQ, S
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3208 - 3211
  • [50] Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms
    Wen, Jin
    Li, Kang
    Gong, Yongkang
    Copner, Bethan
    Hughes, Ben
    Campbell, Michael A.
    Lazzaini, Mattia
    Duan, Lina
    Ma, Chengju
    Fan, Wei
    Jia, Zhenan
    Fu, Haiwei
    Copner, Nigel
    OPTICS COMMUNICATIONS, 2020, 473
12345