Electrical transport properties of (CoxAl1-x)2O3-v oxide magnetic semiconductor and corresponding Co-Al2O3 granular films

被引：9
|
作者：
Tian, Y. F.
Zhang, Y. P.
Yan, Shi-Shen [1 ]
Liu, G. L.
Chen, Y. X.
Mei, L. M.
Ji, G.
Zhang, Z.
机构：
[1] Shandong Univ, Sch Phys & Microelect, Shandong 250100, Peoples R China
[2] Shandong Univ, Natl Key Lab Crystal Mat, Shandong 250100, Peoples R China
[3] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 01期
关键词：
D O I：
10.1063/1.2754645
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(CoxAl1-x)(2)O3-v oxide magnetic semiconductor films were synthesized by introducing an impurity band in the insulating Al2O3 band gap, and the corresponding granular films were obtained by annealing. For both kinds of films, their electrical transport properties are well described by spin dependent variable range hopping mechanism instead of the usually expected intergrain tunnelling. The magnetoresistance was also discussed. (C) 2007 American Institute of Physics.
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页数：3
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