Elimination of the ''birds beak'' in trench MOS-gate power semiconductor devices

被引：0
|
作者：
Thapar, N [1 ]
Baliga, BJ [1 ]
机构：
[1] N CAROLINA STATE UNIV,POWER SEMICOND RES CTR,RES 2,RALEIGH,NC 27695
来源：
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：83 / 86
页数：4
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