Elimination of the ''birds beak'' in trench MOS-gate power semiconductor devices

被引：0
|
作者：
Thapar, N [1 ]
Baliga, BJ [1 ]
机构：
[1] N CAROLINA STATE UNIV,POWER SEMICOND RES CTR,RES 2,RALEIGH,NC 27695
来源：
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：83 / 86
页数：4
相关论文
共 45 条
  • [1] Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
    Chen, Kevin J.
    Yang, Shu
    Liu, Shenghou
    Liu, Cheng
    Hua, Mengyuan
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (04): : 861 - 867
  • [2] A NEW MOS-GATE BIPOLAR-TRANSISTOR FOR POWER SWITCHES
    TANAKA, T
    YASUDA, Y
    OHAYASHI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) : 2041 - 2045
  • [3] Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices
    Thapar, N
    Baliga, BJ
    SOLID-STATE ELECTRONICS, 1998, 42 (11) : 1975 - 1979
  • [4] Overview of trench gated MOS-controlled bipolar semiconductor power devices
    Spulber, O
    Sweet, M
    Vershinin, K
    Luther-King, N
    De Souza, MM
    Sankara-Narayanan, EM
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 444 - 449
  • [5] BIRDS BEAK CONFIGURATION AND ELIMINATION OF GATE OXIDE THINNING PRODUCED DURING SELECTIVE OXIDATION
    SHANKOFF, TA
    SHENG, TT
    HASZKO, SE
    MARCUS, RB
    SMITH, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 216 - 222
  • [6] Investigation of the gate dielectric oxidation treatment in trench gate power devices
    Lin, MJ
    Liaw, CE
    Chang, JJ
    Chang, FL
    Hsu, CCH
    Cheng, HC
    ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 359 - 362
  • [7] Two Capacitance States Memory Characteristic in Metal-Oxide-Semiconductor Structure Controlled by an Outer MOS-Gate Ring
    Li, Hao-Jyun
    Yang, Chang-Feng
    Hwu, Jenn-Gwo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (03) : 1249 - 1254
  • [8] Silicon MOS controlled bipolar power switching devices using trench technology
    Trajkovic, T
    Udrea, F
    Amaratunga, GAJ
    Milne, WI
    Chan, SSM
    Waind, PR
    Thomson, J
    Crees, DE
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (10) : 1153 - 1168
  • [9] Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
    Borga, Matteo
    Mukherjee, Kalparupa
    De Santi, Carlo
    Stoffels, Steve
    Geens, Karen
    You, Shuzhen
    Bakeroot, Benoit
    Decoutere, Stefaan
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    APPLIED PHYSICS EXPRESS, 2020, 13 (02)
  • [10] Investigation of Negative Gate Capacitance in MOS-Gated Power Devices
    Long, Hong Yao
    Sweet, Mark R.
    Narayanan, Ekkanath Madathil Sankara
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3464 - 3469
12345