Fabrication of CdS/CdTe solar cells with transparent p-type conductive SrCuSeF back contact

被引：0

作者：

Wada, Takahiro ^{[1
]}

Kitabayashi, Shuya ^{[1
]}

Yamamoto, Koichi ^{[1
]}

Sakakima, Hiroshi ^{[1
]}

Ogawa, Yohei ^{[2
]}

Hosono, Aikyo ^{[2
]}

Okamoto, Tamotsu ^{[2
]}

机构：

[1] Ryukoku Univ, Dept Mat Chem, Otsu, Shiga 5202194, Japan

[2] Kisarazu Coll, Natl Inst Technol, Kisarazu, Chiba 2920041, Japan

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

CdTe; solar cell; back contact; TCO; SrCuSeF;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Transparent and p-type conductive SrCuSeF films were deposited by pulsed laser deposition (PLD) and their optical and electronic properties were characterized. The SrCuSeF films deposited at T-s >= 200 degrees C showed high transmittance of more than 50% in the visible light region (400< lambda < 800 nm). The band gaps of these SrCuSeF films were all about 2.8 eV. All the SrCuSeF films showed p-type conductivity. The conductivity and carrier concentration of the SrCuSeF films were a little smaller than those of BaCuSeF film. SrCuSeF films were applied to the back contact of CdS/CdTe solar cells. The solar cell with SrCuSeF back contact deposited at substrate temperature of 200 degrees C showed an efficiency of 10.3%. Then, the CdTe surface was etched in bromide-bromate solution before depositing the SrCuSeF back. We obtained the higher conversion efficiency of 11.6% (V-oc= 771 mV, J(sc)= 26.4 mA/cm(2), and FF= 0.570) for a solar cell with CdTe etched in the bromide-bromate solution.

引用

页数：4

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