Spin-Orbit Coupling at the Level of a Single Electron

被引：32

作者：

Maisi, V. F. ^{[1
]}

Hofmann, A. ^{[1
]}

Roeoesli, M. ^{[1
]}

Basset, J. ^{[1
]}

Reichl, C. ^{[1
]}

Wegscheider, W. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 116卷 / 13期

基金：

瑞士国家科学基金会;

关键词：

QUANTUM; RELAXATION; DOT;

D O I：

10.1103/PhysRevLett.116.136803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.

引用

页数：5

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