Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence

被引：21

作者：

Liu, A. J. ^{[1
]}

Chen, W. ^{[1
]}

Qu, H. W. ^{[1
]}

Jiang, B. ^{[1
]}

Zhou, W. J. ^{[1
]}

Xing, M. X. ^{[1
]}

Zheng, W. H. ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

LASER PHYSICS LETTERS | 2010年 / 7卷 / 03期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

divergence angle; graded index profile; low index step; single mode; vertical-cavity surface-emitting laser; WAVE-GUIDE; POWER; VCSELS; INDEX; DEPTH;

D O I：

10.1002/lapl.200910130

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR). [GRAPHICS] Scanning electron microscope (SEM) image of the fabricated device (C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA

引用

页码：213 / 217

页数：5

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