Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

被引：0
|
作者：
Chen, CY [1 ]
Chen, WD
Li, GH
Song, SF
Ding, K
Xu, ZJ
机构：
[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS | 2003年 / 12卷 / 04期
关键词：
a-Si domain; erbium; photoluminescence;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H<Er> films.
引用
收藏
页码：438 / 442
页数：5
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