STATIONARY SHOCK WAVES WITH OSCILLATING FRONT IN DISLOCATION SYSTEMS OF SEMICONDUCTORS

被引：0
|
作者：
Gestrin, S. G. [1 ,2 ]
Shchukina, E. V. [1 ]
机构：
[1] Yuri Gagarin State Tech Univ Saratov, Saratov, Russia
[2] Saratov State Agr Univ, Saratov, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2018年 / 61卷 / 01期
关键词：
shock wave; Korteweg-de Vries-Burgers equation; semiconductor; crystal structure defect; charged dislocation;
D O I：
10.1007/s11182-018-1382-x
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg-de Vries-Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.
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页码：179 / 186
页数：8
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