Photoconductivity relaxation in As2Se3:Sn and AsSe:Sn amorphous thin films

被引：0
|
作者：
Rebeja, S [1 ]
机构：
[1] Moldavian Acad Sci, Inst Appl Phys, Ctr Optoelect, MD-2028 Chisinau, Moldova
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2000年 / 2卷 / 03期
关键词：
amorphous chalcogenides; thin films; photoconductivity relaxation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoconductivity relaxation experiments in As-Se chalcogenides doped by tin were performed. The distribution of the localized states in AsSe amorphous thin films is more strongly influenced by tin if compared to the case of the As2Se3 amorphous thin films.
引用
收藏
页码：293 / 296
页数：4
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